Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity

Published 2008 View Full Article

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Title
Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity
Authors
Keywords
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Journal
Applied Physics Express
Volume 1, Issue 1, Pages 015001
Publisher
IOP Publishing
Online
2008-01-17
DOI
10.1143/apex.1.015001

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