Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

Published 2008 View Full Article

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Title
Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
Authors
Keywords
-
Journal
Applied Physics Express
Volume 1, Issue 1, Pages 011105
Publisher
IOP Publishing
Online
2008-01-17
DOI
10.1143/apex.1.011105

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