4.6 Article

High-performance Hg2+ FET-type sensors based on reduced graphene oxide-polyfuran nanohybrids

Journal

ANALYST
Volume 139, Issue 16, Pages 3852-3855

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4an00403e

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Funding

  1. National Research Foundation of Korea (NRF) - Korean government (MEST) [2011-0017125]

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A new type of field-effect transistor (FET) sensor, based on reduced graphene oxide (rGO)-polyfuran (PF) nanohybrids, was strategically developed. The sensing transducer exhibited a rapid response (<1 s) and high sensitivity (10 pM) in a liquid-ion-gated FET-type Hg2+ sensor. Excellent Hg2+ discrimination in heavy metal mixtures was also monitored in real time.

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