Phase Stability and Defect Physics of a Ternary ZnSnN2Semiconductor: First Principles Insights

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2

(2013) Lise Lahourcade et al.   ADVANCED MATERIALS

Growth, disorder, and physical properties of ZnSnN2

(2013) N. Feldberg et al.   APPLIED PHYSICS LETTERS

The high-throughput highway to computational materials design

(2013) Stefano Curtarolo et al.   NATURE MATERIALS

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Role of nitrogen vacancies in the luminescence of Mg-doped GaN

(2012) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Bandgap engineering of ZnSnP2 for high-efficiency solar cells

(2012) David O. Scanlon et al.   APPLIED PHYSICS LETTERS

Correcting density functional theory for accurate predictions of compound enthalpies of formation: Fitted elemental-phase reference energies

(2012) Vladan Stevanović et al.   PHYSICAL REVIEW B

Quasiparticle band structure of Zn-IV-N2compounds

(2011) Atchara Punya et al.   PHYSICAL REVIEW B

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Wurtzite-derived polytypes of kesterite and stannite quaternary chalcogenide semiconductors

(2010) Shiyou Chen et al.   PHYSICAL REVIEW B

Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights

(2009) Shiyou Chen et al.   APPLIED PHYSICS LETTERS

Electronic structure and stability of quaternary chalcogenide semiconductors derived from cation cross-substitution of II-VI andI-III-VI2compounds

(2009) Shiyou Chen et al.   PHYSICAL REVIEW B

Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources

(2008) K. Du et al.   JOURNAL OF CRYSTAL GROWTH

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS