Journal
ADVANCED MATERIALS
Volume 24, Issue 48, Pages 6423-6428Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202691
Keywords
perovskite oxide interface; pulsed laser deposition; LaAlO3; SrTiO3; atomic layer engineering; epitaxial strain
Categories
Funding
- U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- U.S. Department of Energy, Basic Energy Sciences [DE-AC02-06CH11357]
Ask authors/readers for more resources
Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
