Journal
ADVANCED MATERIALS
Volume 23, Issue 20, Pages 2278-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201003750
Keywords
-
Categories
Funding
- DOE, Office of Basic Energy Science [DEFG03 - 02ER46006]
- MRSEC, NSF [DMR05 - 20415]
Ask authors/readers for more resources
Introducing nitrogen vacancies into gallium nitride nanoparticles might allow tuning optoelectronic properties. Comparing experimental and theoretical data establishes that an observed broad chemical shift distribution in Ga-71 MAS NMR spectra results from chemical inhomogeneities at the atomic level within GaN nanoparticles, which can be correlated with the intensity of blue band edge related photoluminescence.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
