4.8 Article

Strain-Gated Piezotronic Logic Nanodevices

Journal

ADVANCED MATERIALS
Volume 22, Issue 42, Pages 4711-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201001925

Keywords

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Funding

  1. NSF [DMS 0706436, CMMI 0403671, ENG/CMMI 112024]
  2. DARPA [Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009]
  3. BES DOE [DE-FG02-07ER46394]
  4. DARPA/ARO [W911NF-08-1-0249]

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We present the first piezoelectric triggered mechanical-electronic logic operation using the piezotronic effect, through which the integrated mechanical actuation and electronic logic computation are achieved using only ZnO nanowires (NWs). By utilizing the piezoelectric potential created in a ZnO NW under externally applied deformation, strain-gated transistors (SGTs) have been fabricated. Using the SGTs as building blocks, universal logic components such as inverters, NAND, NOR, and XOR gates have been demonstrated for performing piezotronic logic calculations.

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