Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 14, Pages 1994-2004Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201303298
Keywords
charge transport; conducting polymers; conjugated polymers; organic field-effect transistors; structure-property relationships
Categories
Funding
- Engineering and Physical Sciences Research Council UK [EP/E051804/1]
- European Commission [NMP3-LA-2008-212311, ITN-238177]
- Region Wallonne (FEDER - Smartfilm RF project)
- Region Wallonne (OPTI2MAT excellence program)
- INTERREG project ORGANEXT
- Fund for Scientific Research-Flanders (FWO)
- BELSPO [IAP P6/27]
- IWT (Institute for the Promotion of Innovation by Science and Technology in Flanders) via the SBO project Polyspec
- Engineering and Physical Sciences Research Council [EP/E051804/1] Funding Source: researchfish
- EPSRC [EP/E051804/1] Funding Source: UKRI
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The influence of the interface of the dielectric SiO2 on the performance of bottom-contact, bottom-gate poly(3-alkylthiophene) (P3AT) field-effect transistors (FETs) is investigated. In particular, the operation of transistors where the active polythiophene layer is directly spin-coated from chlorobenzene (CB) onto the bare SiO2 dielectric is compared to those where the active layer is first spin-coated then laminated via a wet transfer process such that the film/air interface of this film contacts the SiO2 surface. While an apparent alkyl side-chain length dependent mobility is observed for films directly spin-coated onto the SiO2 dielectric (with mobilities of approximate to 10(-3) cm(2) V-1 s(-1) or less) for laminated films mobilities of 0.14 +/- 0.03 cm(2) V-1 s(-1) independent of alkyl chain length are recorded. Surface-sensitive near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements indicate a strong out-of-plane orientation of the polymer backbone at the original air/film interface while much lower average tilt angles of the polymer backbone are observed at the SiO2/film interface. A comparison with NEXAFS on crystalline P3AT nanofibers, as well as molecular mechanics and electronic structure calculations on ideal P3AT crystals suggest a close to crystalline polymer organization at the P3AT/air interface of films from CB. These results emphasize the negative influence of wrongly oriented polymer on charge carrier mobility and highlight the potential of the polymer/air interface in achieving excellent out-of-plane orientation and high FET mobilities.
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