Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 20, Issue 12, Pages 1994-2003Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201000149
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Funding
- National Basic Research Program of China (973 Program, 863 Program) [2007CB935500, 2007AA03Z305, 50802117]
- National Joint Science Fund of the Guangdong Province [U0634002, U0734003]
- Foundation of Education Ministry of China [20070558063, 09lgpy28]
- Science and Technology Department of Guangdong Province
- Education Department of Guangdong Province
- Science and Technology Department of Guangzhou City
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Vapor-liquid-solid processing of boron nanowires (BNWs) can be carried out either using a bottom-up or top-down growth mode, which results in different contact modes between the nanowire and the substrate. The contact mode may strongly affect the electrical transport and field-emission performance of the individual boron nanowires grown on a Si substrate. The electrical transport and field-emission characteristics of individual boron nanowires of different contact modes are investigated in situ using a scanning electron microscope. The contact barriers are very distinct for the different contact modes. Moreover, the transition from a contact-limited to a bulk-limited field-emission (FE) process is demonstrated in nanoemitters for the first time, and the proposed improved metal-insulator-vacuum (MIV) model may better illustrate the nonlinear behavior of the Fowler-Nordheim (FN) plots in these nanoscale systems. Individual BNWs with different contact modes have a discrepancy in their emission stability and vacuum breakdown characteristics though they have similar aspect ratios, which suggests that their electrical transport and field-emission performance are closely related to their contact mode. Boron nanowires grown in the base-up mode have better field-emission performances and are more beneficial than those grown in the top-down mode for various device applications.
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