A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20nm FinFET technologies

Published 2015 View Full Article

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Title
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20nm FinFET technologies
Authors
Keywords
SRAM, FinFET, Low power, Near-threshold, Process variation
Journal
INTEGRATION-THE VLSI JOURNAL
Volume 50, Issue -, Pages 91-106
Publisher
Elsevier BV
Online
2015-02-20
DOI
10.1016/j.vlsi.2015.02.002

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