Article
Chemistry, Physical
V. M. Mikoushkin, E. A. Makarevskaya, D. E. Marchenko
Summary: Low-energy nitrogen ion implantation was used to modify the electronic structure and chemical composition of the n-GaAs surface, resulting in the formation of a p-n structure with a GaAs1-xNx alloy layer. This nano-heterostructure is expected to have attractive properties for infrared applications, without the need for wet lithography.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Dong Hun Lee, Honghwi Park, Michael Clevenger, Hyeonghun Kim, Chung Soo Kim, Mingyuan Liu, Giyong Kim, Han Wook Song, Kwangsoo No, Sung Yeol Kim, Dong-Kyun Ko, Anne Lucietto, Hongsik Park, Sunghwan Lee
Summary: This study demonstrates a simple processing route to fabricate oxide-based p-n heterojunctions with high rectification performance. By selecting appropriate materials and post-processing methods, high on/off rectification behavior, low saturation current, and small turn-on voltage were achieved in the heterojunctions.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Biochemistry & Molecular Biology
Yan Fan, Tao Wang, Yinwei Qiu, Yinli Yang, Qiubo Pan, Jun Zheng, Songwei Zeng, Wei Liu, Gang Lou, Liang Chen
Summary: Graphene p-n junctions have important applications in optical interconnection and low-power integrated circuits. Our study introduces a new type of pure graphene oxide (pGO) vertical p-n junction, demonstrating significant rectification effects and photoelectric responses. Additionally, our work offers a simple and convenient method for preparing undoped GO vertical p-n junctions, showing great potential for applications in electronics and sensors.
Article
Chemistry, Physical
Kyung-Mun Kang, Chan Lee, Minjae Kim, Haryeong Choi, Dong-eun Kim, Seung-Rok Kim, Jin-Woo Park, Hyung-Ho Park
Summary: A stable atomic layer deposition process is established for the fabrication of stable and reproducible p-type nanostructures based on zinc oxide (ZnO) for electronic devices. N and F codoped p-type ZnO (NFZO) thin films are demonstrated to have p-type conductivity through Hall effect measurements. Electroluminescence analysis shows significant emission in the blue region for the fabricated light-emitting device. Furthermore, the as-developed p-type NFZO prevents the piezoelectric screening effect that compromises the output performance of the piezoelectric nanogenerator.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Lele Ren, Aifang Yu, Wei Wang, Di Guo, Mengmeng Jia, Pengwen Guo, Yufei Zhang, Zhong Lin Wang, Junyi Zhai
Summary: DTENG is a direct-current triboelectric nanogenerator based on dynamic p-n junction, which utilizes the coupling between tribovoltaic effect and photovoltaic effect to enhance the output, showing potential applications in energy harvesting from mechanical energy and photon energy.
Article
Chemistry, Physical
Yanrong Wang, Feng Wang, Zhenxing Wang, Junjun Wang, Jia Yang, Yuyu Yao, Ningning Li, Marshet Getaye Sendeku, Xueying Zhan, Congxin Shan, Jun He
Summary: The study introduces a driving-voltage-free optoelectronic synaptic device based on MoTe2/alpha-In2Se3 ferroelectric p-n junctions, achieving non-volatile reconfigurable photovoltaic effect and improved photoelectrical conversion efficiency. It also successfully mimics retina synapse-like vision functions, demonstrating optoelectronic short-term and long-term plasticity, as well as basic neuromorphic learning and memory rule without applying driving voltage. This work highlights the potential of ferroelectric p-n junctions for enhanced solar cells and low-power optoelectronic synaptic devices for neuromorphic machine vision.
Article
Chemistry, Multidisciplinary
Elena Titova, Dmitry Mylnikov, Mikhail Kashchenko, Ilya Safonov, Sergey Zhukov, Kirill Dzhikirba, Kostya S. Novoselov, Denis A. Bandurin, Georgy Alymov, Dmitry Svintsov
Summary: Graphene's high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance make it a promising material for the detection of terahertz (THz) radiation. However, the weak reaction of graphene's physical properties to the detected radiation is due to the absence of a band gap. This study investigates the effect of electrically induced band gap on THz detection in graphene bilayer with split-gate p-n junction, and demonstrates that the induction of a band gap leads to increased current and voltage responsivities.
Article
Chemistry, Multidisciplinary
Ruiheng Chang, Qiao Chen, Wang Shen, Youwei Zhang, Butian Zhang, Shun Wang
Summary: Controllable switching from a Schottky junction to a p-n junction in a MoS2 device is achieved using an ionic liquid-gated technique. The formation of the junctions is revealed by spatially resolved photocurrent mappings. The switching behavior is correlated with the evolution of the energy band, as confirmed by finite element simulation.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
D. Verheij, M. Peres, S. Cardoso, L. C. Alves, E. Alves, C. Durand, J. Eymery, J. Fernandes, K. Lorenz
Summary: Self-powered particle detectors based on GaN core/shell p-n junction microwires offer exceptional flexibility and compactness in applications where size limits and low power consumption are key requisites. These microwires demonstrate high resistance to radiation and high crystalline quality, making them interesting building blocks for radiation-hard devices. Despite a small increase in leakage current after prolonged proton irradiation, the transient ionocurrent signal remains stable during irradiation with a total proton fluence of at least 1 x 10(16) protons/cm(2).
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Abdurrahman Ali El Yumin, Nicolas F. Zorn, Felix J. Berger, Daniel Heimfarth, Jana Zaumseil
Summary: In this study, we demonstrated exciton and charged exciton electroluminescence from frozen p-n junctions in polymer-sorted carbon nanotube networks. By controlling the initial parameters and lateral bias, we found that the emission intensity and the ratio of charged exciton to exciton were predominantly determined by the tilted potential profile and the number of excess carriers.
Article
Chemistry, Analytical
Meiyan Zhu, Xiaotong Dong, Ming Li, Liangbin Jia, Ye Ma, Minggang Zhao, Hongzhi Cui
Summary: A novel colorimetric detection method for hydroquinone in seawater was developed using CoMn2O4/beta-MnO2 p-n junction oxidase mimetics, with enhanced catalysis ability through the photo-induced p-n junction interface effect. The method exhibited good adaptability and recovery rate, providing a promising approach for practical application in seawater detection.
ANALYTICA CHIMICA ACTA
(2021)
Article
Physics, Applied
Lin Tian, Francois Sfigakis, Arjun Shetty, Ho-Sung Kim, Nachiket Sherlekar, Sara Hosseini, Man Chun Tam, Brad van Kasteren, Brandon Buonacorsi, Zach Merino, Stephen R. Harrigan, Zbigniew Wasilewski, Jonathan Baugh, Michael E. Reimer
Summary: Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have potential applications in quantum optoelectronics and ease of integration with other components. However, unwanted charge accumulation at the p-n junction has been a major obstacle. This study introduces a gate voltage protocol that clears the parasitic charge accumulation at low temperature, enabling cryogenic operation of devices and achieving stable, bright, dopant-free lateral p-n junctions.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Wonjun Choi, Jongtae Ahn, Ki-Tae Kim, Hye-Jin Jin, Sungjae Hong, Do Kyung Hwang, Seongil Im
Summary: The highly crystalline 2D/3D-mixed p-transition metal dichalcogenide (TMD)/n-Ga2O3 heterojunction devices were fabricated by mechanical exfoliation, focusing on ambipolar channel transistors with two different types of channels in a single device architecture, with successful high-speed photo-sensing applications achieved.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Jesse Balgley, Jackson Butler, Sananda Biswas, Zhehao Ge, Samuel Lagasse, Takashi Taniguchi, Kenji Watanabe, Matthew Cothrine, David G. Mandrus, Jairo Velasco, Roser Valenti, Erik A. Henriksen
Summary: In this study, we demonstrate ultrasharp lateral p-n junctions in graphene using electronic transport, scanning tunneling microscopy, and first-principles calculations. These junctions are formed at the boundary between differently doped regions of a graphene sheet, with one side being intrinsic and the other side being charge-doped by proximity to an alpha-RuCl3 flake. Our results show potential variations on a sub 10 nm length scale in heterostructures of graphene, hexagonal boron nitride, and alpha-RuCl3. First-principles calculations reveal a sharp decay of charge-doping from the edge of the alpha-RuCl3 flake within just a few nanometers.
Article
Chemistry, Physical
Yong Wang, Shishi Shen, Mingyue Liu, Guangyu He, Xibao Li
Summary: Tribocatalysis research has significant potential for environmental water pollution control, but studies involving hetero-junctions, particularly in the context of p-n junction tribocatalysis, are scarce. This study synthesized a Cu1.8S/CuCo2S4 p-n junction composite catalyst and investigated its performance in the tribocatalytic degradation of organic pollutants. The results showed that the Cu1.8S/CuCo2S4 catalyst achieved remarkably high degradation rates for various organic pollutants. The study also proposed a plausible tribocatalytic mechanism and provided insights for the exploration of innovative heterojunction tribocatalysts.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2024)
