Journal
ACS NANO
Volume 8, Issue 2, Pages 1584-1589Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn405867p
Keywords
resistive switching; X-ray irradiation; photovoltaic effect; Magneli phase; Joule heating; defect generation
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Funding
- Argonne, a U.S. Department of Energy Office of Science laboratory [DE-AC02-06CH11357]
- Global Research Laboratory program through the National Research Foundation of Korea [2012040157]
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The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. We found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. Understanding X-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.
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