Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms

Published 2014 View Full Article

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Title
Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms
Authors
Keywords
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Journal
ACS Nano
Volume 8, Issue 10, Pages 10480-10485
Publisher
American Chemical Society (ACS)
Online
2014-09-27
DOI
10.1021/nn5038509

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