Journal
ACS NANO
Volume 7, Issue 3, Pages 2126-2131Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn304684b
Keywords
topological insulator; ambipolar conduction; nanoribbon; bismuth selenide; bismuth telluride
Categories
Funding
- China Scholarship Council
- NSF [DMR-1151534]
- National Natural Science Foundation of China [50831006]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1151534] Funding Source: National Science Foundation
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We report the composition- and gate voltage-Induced tuning of transport properties In chemically synthesized Bi-2(Te1-xSex)(3) nanoribbons. It is found that Increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi-2(Te1-xSex)(3) nanoribbons when xis greater than similar to 10%. In Bi-2(Te1-xSex)(3) nanoribbons with x approximate to 20%, gate voltage enables ambipolar modulation of resistance (or conductance) In samples with thicknesses around or larger than 100 nm, Indicating significantly enhanced contribution In transport from the gapless surface states.
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