Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy

Published 2013 View Full Article

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Title
Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy
Authors
Keywords
-
Journal
ACS Nano
Volume 7, Issue 9, Pages 8258-8265
Publisher
American Chemical Society (ACS)
Online
2013-08-24
DOI
10.1021/nn403750h

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