Low-Voltage Back-Gated Atmospheric Pressure Chemical Vapor Deposition Based Graphene-Striped Channel Transistor with High-κ Dielectric Showing Room-Temperature Mobility > 11 000 cm2/V·s

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Title
Low-Voltage Back-Gated Atmospheric Pressure Chemical Vapor Deposition Based Graphene-Striped Channel Transistor with High-κ Dielectric Showing Room-Temperature Mobility > 11 000 cm2/V·s
Authors
Keywords
-
Journal
ACS Nano
Volume 7, Issue 7, Pages 5818-5823
Publisher
American Chemical Society (ACS)
Online
2013-06-19
DOI
10.1021/nn400796b

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