Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires

Title
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires
Authors
Keywords
-
Journal
ACS Nano
Volume 6, Issue 4, Pages 3109-3113
Publisher
American Chemical Society (ACS)
Online
2012-03-14
DOI
10.1021/nn204838m

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