Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma

Title
Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma
Authors
Keywords
-
Journal
ACS Nano
Volume 6, Issue 3, Pages 1970-1978
Publisher
American Chemical Society (ACS)
Online
2012-02-22
DOI
10.1021/nn3005262

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