Kinetic Growth of Self-Formed In2O3 Nanodots via Phase Segregation: Ni/InAs System

Highly compact In2O3 nanodots with unifoim size ere synthesized by a novel approach via direct annealing of NI/InAs samples.at temperatures over 250 degrees C. The In2O3 nanodots Were formed by solid diffusion between nickel and indium arsenide (InAs) and phase segregation via a catalyst-assisted kinetic process. By controlling the annealing time and ambient conditions, the size and density of In2O3 nanodots can be controlled. From photoluminescence (PL) measurements, two distinct peaks located at similar to 430 and similar to 850 nm, corresponding to 2.9 and 1.5 eV for In2O3 nanodots, can be observed. The peaks originate from radioactive recombination centers such as oxygen vacancies or indium interstitials Inside In2O3 nanodots. The periodic array of Ni microdiscs with diameters and interdisc spacing of similar to 5 and similar to 10 mu m On InAs substrate surface prepared by a photolithography process demonstrated the precise control of In2O3 nanodots at a specific position. Applications for precisely locating optoeleetronic nanodevices In combination with electronic. nanodevices are envisioned.