Journal
ACS NANO
Volume 3, Issue 12, Pages 4117-4121Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn9012516
Keywords
carbon nanotube; nanoscale contacts; passivation; Schottky barrier
Categories
Funding
- MOE AcRF Tier 2 [ARC17/07, T207B1203]
- Chartered-NTU
Ask authors/readers for more resources
It is well-known that the electrical properties and performance of carbon nanotube field-effect transistors (CNTFETs) are largely dominated by their nanotube/metal contacts, Such nanometer-scaled contacts are typically different from traditional bulk semiconductor/metal contacts, as a thin layer of molecules could be unintentionally introduced between the CNTs and metal electrodes through either adsorption of environmental molecules or device fabrication processes. Here, we present a nanocontact model, in which the energy band bending in the CNTs near the contacts is quantitatively characterized through establishment of electrostatic charge balance between the CNTs and metallic pads under the influences of environmental oxygen. The concept of dipole polarization along the CNT channel in the FET geometry is, for the first time, introduced in order to interpret puzzling findings from several CNT Schottky transistors with asymmetric source and drain contacts.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available