Solution-Processable, Thin, and High-κ Dielectric Polyurea Gate Insulator with Strong Hydrogen Bonding for Low-Voltage Organic Thin-Film Transistors

Published 2018 View Full Article

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Title
Solution-Processable, Thin, and High-κ Dielectric Polyurea Gate Insulator with Strong Hydrogen Bonding for Low-Voltage Organic Thin-Film Transistors
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 10, Issue 38, Pages 32462-32470
Publisher
American Chemical Society (ACS)
Online
2018-09-03
DOI
10.1021/acsami.8b11083

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