4.8 Article

Solvent Vapor Annealing of Ferroelectric P(VDF-TrFE) Thin Films

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 20, Pages 18312-18318

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/am5055299

Keywords

ferroelectric polymer; solvent vapor annealing; P(VDF-TrFE)

Funding

  1. National Key Technologies RD Program [2009ZX02302-002]
  2. National Natural Science Foundation of China [61076076, 61076068]
  3. STCSM [13NM1400600]
  4. NSAF [U1430106]
  5. ZhuoXue Plan of Fudan University

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Ferroelectric polymers are a kind of promising materials for low-cost flexible memories. However, the relatively high thermal annealing temperature restricts the selection of some flexible polymer substrates. Here we report an alternative method to obtain ferroelectric poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin films under low process temperatures. Spin-coated P(VDF-TrFE) thin films were solvent vapor processed at 30 degrees C for varied times. Structural analyses indicated that solvent vapor annealing induced crystallization to form a ferroelectric beta phase, and electrical measurements from both macroscopic ferroelectric switching and microscopic vertical piezoresponse force microscopy further proved the films enduring solvent vapor annealing for suitable short times possessed good ferroelectric and piezoelectric properties. To illuminate the application of solvent vapor annealing on ferroelectric devices, we further fabricated ferroelectric capacitor memory devices with a structure of Al/P(VDF-TrFE)/Al2O3/p-Si/Al where the ferroelectric layer was solvent vapor annealed. Ferroelectric capacitors showed obvious bistable operation and comparable ON/OFF ratio and retention performance. Our work makes it possible to structure ferroelectric devices on flexible substrates that require low process temperatures.

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