Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)

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Title
Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 6, Issue 19, Pages 16782-16791
Publisher
American Chemical Society (ACS)
Online
2014-09-05
DOI
10.1021/am504046b

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