4.8 Article

Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 14, Pages 6535-6540

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/am400903c

Keywords

quantum dots; hybrid OLEDs; exciton; electroluminescence; hole transport layer; noninverted structure

Funding

  1. National Research Foundation of Singapore [NRF-CRP-6-2010-2, NRF-RF-2009-09]
  2. Singapore Agency for Science, Technology and Research (A*STAR) SERC [112 120 2009, 092 101 0057]

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We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.

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