Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 7, Pages 3471-3475Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am300551y
Keywords
in situ atomic layer doping; remote plasma; zinc oxide; X-ray absorption near edge spectroscopy; X-ray photoelectron spectroscopy; atomic layer deposition
Funding
- National Science Council in Taiwan [NSC 100-2120-M-002-014, NSC 101-3113-E-002-009]
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Nitrogen-doped ZnO (ZnO:N) films were prepared by remote plasma in situ atomic layer doping. X-ray photoelectron and absorption near-edge spectroscopies reveal the presence of Zn-N bond and a decrease in strength of the O 2p hybridized with Zn 4s states, which are consistent e. with the decrease of electron concentration in ZnO:N films with increasing nitrogen content and indicate the formation of acceptor states by occupation of oxygen sites with nitrogen. Linear dependence between the nitrogen content and the atomic layer doping percentage indicates the electrical properties and local electronic structures this atomic layer doping technique.
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