Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 3, Issue 9, Pages 3261-3263Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am200801u
Keywords
bismuth ferrite; thickness dependence; ferroelectric properties
Funding
- National Natural Science Foundation of China [51102173]
- Fundamental Research Funds for the Central Universities
- Sichuan University [2082204144033]
- National University of Singapore
Ask authors/readers for more resources
The ferroelectric behavior of BiFeO3 thin films is modified by changing the film thicknesses, where the BiFeO3 thin films with different thicknesses were grown on SrRuO3/Pt/TiO2/SiO2/Si(100) substrates by radio frequency sputtering. The mixture of (110) and (111) orientations is induced for all BiFeO3 thin films regardless of their thicknesses, together with the columnar structure and the dense microstructure. Their dielectric behavior is almost independent of the film thickness where all thin films have a low dielectric loss. A giant remanent polarization of 2P(r) approximate to 156.6-188.8 mu C/cm(2) is induced for the BiFeO3 thin films in the thickness range of 190-600 nm. As a result, it is an effective way to improve the ferroelectric behavior of the BiFeO3 thin film by tailoring the film thickness.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available