Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 3, Issue 7, Pages 2417-2424Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am2003284
Keywords
silicon; pore formation; through-hole; electrochemical etching; metal-assisted etching; catalyst
Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan [458]
- Osaka University
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Electrochemical pore formation in Si using an anodized needle electrode was studied. In the electrochemical process, a Pt, Ir or Pd needle with a diameter of 50-200 mu m was brought into contact at its tip with a Si wafer, which was not connected to an external circuit, in HF solution. By applying an anodic potential to the needle electrode against a Pt counter electrode, a pore with a diameter slightly larger than the diameter of the needle electrode was formed in both p-type and n-type Si, of which current efficiency was higher for n-type Si. Through-holes were electrochemically formed in p-type and n-type Si wafers at speeds higher than 30 mu m min(-1) using a sharpened Ir needle electrode. A model was proposed to explain the results, in which the pore formation was attributed to successive dissolution of Si atoms near the 3-phase (Si/metal/HF solution) boundary by positive holes injected from the needle electrode to the surface of Si.
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