Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices

Published 2009 View Full Article

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Title
Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 1, Issue 7, Pages 1451-1456
Publisher
American Chemical Society (ACS)
Online
2009-06-10
DOI
10.1021/am900138f

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