Journal
IET CIRCUITS DEVICES & SYSTEMS
Volume 9, Issue 2, Pages 111-118Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-cds.2014.0202
Keywords
semiconductor quantum dots; MOSFET; silicon-on-insulator; silicon compounds; silicon; elemental semiconductors; quantum dot gate field-effect transistors; QDGFETs; silicon-on-insulator substrate; SOI; silicon dioxide-cladded silicon quantum dots; tunnel gate insulator; charge carrier tunnelling; inversion channel; C-V characteristics; MOS device; gate insulator; intermediate state generation; insulator structure; charge carriers; Poisson equations; Schrodinger equations; SiO2-Si
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This paper presents the observation of intermediate state in the quantum dot gate field-effect transistors (QDGFETs) in silicon-on-insulator (SOI) substrate. Silicon dioxide (SiO2)-cladded silicon (Si) quantum dots (QDs) are site-specifically self-assembled on the top of SiO2 tunnel gate insulator on SOI substrates. Charge carrier tunnelling from the inversion channel to the QD layers on top of the gate insulator is responsible for the generation of intermediate state. Charge tunnelling is also verified by the C-V characteristics of the MOS device having same insulator structure as the gate region of the QDGFET. Considering the transfer of charge carriers from the inversion channel to two layers of SiO2-cladded Si QDs, a model based on self-consistent solution of Schrodinger and Poisson equations, is also presented, to explain the generation of intermediate state.
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