Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy

Published 2018 View Full Article

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Title
Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy
Authors
Keywords
-
Journal
ACS Energy Letters
Volume 3, Issue 2, Pages 476-481
Publisher
American Chemical Society (ACS)
Online
2018-01-24
DOI
10.1021/acsenergylett.7b01330

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