Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing

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Title
Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing
Authors
Keywords
-
Journal
IEEE Journal of the Electron Devices Society
Volume 6, Issue -, Pages 164-168
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-12-09
DOI
10.1109/jeds.2017.2781250

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