Journal
PHOTONICS RESEARCH
Volume 6, Issue 4, Pages 277-281Publisher
OPTICAL SOC AMER
DOI: 10.1364/PRJ.6.000277
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- Air Force Office of Scientific Research (AFOSR) [FA9550-17-1-0071]
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Transparent conductive oxides have emerged as a new type of plasmonic material and demonstrated unique electro-optic (E-O) modulation capabilities for next-generation photonic devices. In this paper, we report an ultra-compact, broadband electro-absorption (EA) modulator using an epsilon-near-zero (ENZ) indium-tin oxide (ITO). The device is fabricated on a standard silicon-on-insulator platform through the integration with a 3 mu m long, 300 nm wide gold plasmonic slot waveguide. The active E-O modulation region consists of a metal - HfO2-ITO capacitor that can electrically switch the ITO into ENZ with ultra-high modulation strengths of 2.62 and 1.5 dB/mu m in simulation and experiment, respectively. The EA modulator also demonstrated a uniform E-O modulation with 70 nm optical bandwidth from 1530 to 1600 nm wavelength. (c) 2018 Chinese Laser Press
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