4.5 Article

Atomic layer deposition of ultra-thin and smooth Al-doped ZnO for zero-index photonics

Journal

MATERIALS RESEARCH EXPRESS
Volume 5, Issue 1, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/aaa653

Keywords

epsilon-near-zero; atomic layer deposition; plasmonics; aluminum-doped zinc oxide; nanophotonics

Funding

  1. Defense Advanced Research Projects Agency [N66001-17-1-4047]
  2. Young Investigator Development Program
  3. Undergraduate Research and Scholarly Achievement (URSA) Program
  4. Vice Provost for Research at Baylor University
  5. Office of the Vice Provost for Research at Baylor University

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Wereport fabrication of smooth Al-doped ZnO (AZO) films < 100 nm by atomic layer deposition (ALD) with epsilon-near-zero (ENZ) frequencies in the near-infrared region controlled by deposition parameters. Excitation of the ENZ plasmon-polariton mode in the AZO films is experimentally demonstrated. The ALD growth of smooth ultra-thin AZO nanolayers with tunable ENZ frequency enables the development of ultra-compact and tunable metamaterial devices and flat nonlinear/quantum zero-index optics.

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