Journal
ADVANCED MATERIALS INTERFACES
Volume 5, Issue 6, Pages -Publisher
WILEY
DOI: 10.1002/admi.201701411
Keywords
CuI; fluctuation-induced tunneling; high mobility; transport; weak antilocalizations
Funding
- Deutsche Forschungsgemeinschaft (DFG) [GR 1011/28-1]
- Universitat Leipzig
- DFG [SFB 762]
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Transparent p-type conductive -CuI thin films typically exhibit unexpectedly high hole mobilities in the range of 10 cm(2) V-1 s(-1) even when heavily textured. To explain this phenomenon, the transport properties of such thin films are investigated. The temperature-dependent resistivities of the textured (111)-oriented films with different carrier concentration are fitted using the fluctuation-induced tunneling conductivity (FITC) model in series with a power law. The FITC model describes barriers at the grain boundaries whereas the power law considers the scattering in the metallic interior of the grains. Magnetoresistance measurements performed on a reactively DC-sputtered thin film at low temperatures (T < 8 K) suggest a 2D weak antilocalization effect with phase coherence lengths of about 50 nm. This is corroborated by a typical logarithmic temperature dependence of the zero-field conductance. An n-type inversion layer or a defect band at the interfaces of the grains as origin of the 2D carrier system and the barriers at the grain boundaries is proposed. This leads to a conclusive description of the electrical transport properties of -CuI thin films and explains the high hole mobilities which are due to a suppressed backscattering at the grain boundaries in the presence of tunneling channels.
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