Journal
NANOSCALE RESEARCH LETTERS
Volume 13, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/s11671-018-2513-6
Keywords
Ferroelectric; Asymmetric resistive switching; Ferroelectric/semiconductor heterojunctions
Funding
- National Natural Science Foundation of China [51202057]
- Natural Science Foundation of Henan Province [162300410016]
- Key Scientific Research Projects of Henan Province [17A140004]
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Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10(5) ns under -8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.
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