Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

Published 2015 View Full Article

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Title
Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 62, Issue 6, Pages 2933-2940
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-12-18
DOI
10.1109/tns.2015.2492778

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