4.5 Article

Quantification of the Conditioning Phase in Cooled Pixelated TlBr Detectors

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 62, Issue 4, Pages 1785-1790

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2015.2448420

Keywords

Alternative room temperature semiconductor; TlBr spectrometers

Funding

  1. DHS DNDO (SBIR) through RMD [HSHQDC-13-C-00068]
  2. DOE through LLNL [DE-AC52-07NA27344]

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Thallium-bromide (TlBr) is currently under investigation as an alternative room-temperature semiconductor gamma-ray spectrometer due to its favorable material properties (large bandgap, high atomic numbers, and high density). Previous work has shown that 5 mm thick pixelated TlBr detectors can achieve sub-1% FWHM energy resolution at 662 keV for single-pixel events. These results are limited to -20 degrees C operation where detector performance is stable. During the first one to five days of applied bias at -20 degrees C, many TlBr detectors undergo a conditioning phase, where the energy resolution improves and the depth-dependent electron drift velocity stabilizes. In this work, the spectroscopic performance, drift velocity, and freed electron concentrations of multiple 5 mm thick pixelated TlBr detectors are monitored throughout the conditioning phase. Additionally, conditioning is performed twice on the same detector at different times to show that improvement mechanisms relax when the detector is stored without bias. We conclude that the improved spectroscopy results from internal electric field stabilization and uniformity caused by fewer trapped electrons.

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