Review
Physics, Applied
Ruizhe Zhang, Yuhao Zhang
Summary: This paper investigates avalanche and non-avalanche breakdown mechanisms in wide bandgap and ultra-wide bandgap devices and comparatively introduces various breakdown voltage characterization methods. Additionally, it discusses the device physics behind time- and frequency-dependent breakdown voltage and enabling device structures for avalanche breakdown, while identifying research gaps for understanding breakdown in wide bandgap and ultra-wide bandgap power devices.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Computer Science, Information Systems
Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Kyu-Hwan Shim, Chel-Jong Choi
Summary: The performance of AlGaN/GaN HEMT devices fabricated on Si and sapphire substrates was investigated. The drain current and breakdown voltage of the HEMT devices were improved after SiO2 passivation, indicating the effectiveness of SiO2 passivation. The AlGaN/GaN HEMT fabricated on the sapphire substrate exhibited better performance characteristics due to high crystalline quality and improved surface.
Article
Engineering, Electrical & Electronic
Feifei Ge, Bing Chen, Yangpeng Wang, Feifei Zhou, Renfei Zheng, Xiaofan Yang, Peng Qian, Nanyang Xu
Summary: We present a wideband balun-based microwave device for quantum manipulation of nitrogen-vacancy centers in diamond. The device has a large bandwidth and excellent magnetic field homogeneity, making it suitable for solid-state quantum information processing.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Article
Physics, Applied
Kai Su, Qi He, Jinfeng Zhang, Zeyang Ren, Linyue Liu, Jincheng Zhang, Xiaoping Ouyang, Yue Hao
Summary: The study found that impurities in diamond plates have the most significant impact on the performance of diamond radiation detectors, while dislocations have a weaker effect on CCEs. Moreover, maintaining a thickness of diamond plates above 100μm is crucial for obtaining high-performance detectors.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Computer Science, Information Systems
Yang Wang, Xiangliang Jin, Jian Yang, Feng Yan, Yujie Liu, Yan Peng, Jun Luo, Jun Yang
Summary: The input/output (I/O) pins of an industry-level fluorescent optical fiber temperature sensor readout circuit require on-chip integrated high-performance electro-static discharge (ESD) protection devices. The failure level of the basic N-type buried layer gate-controlled silicon controlled rectifier (NBL-GCSCR) manufactured by the 0.18 mu m standard bipolar-CMOS-DMOS (BCD) process is insufficient. To address this, an on-chip integrated novel deep N-well gate-controlled SCR (DNW-GCSCR) with a high failure level is proposed.
FRONTIERS OF INFORMATION TECHNOLOGY & ELECTRONIC ENGINEERING
(2022)
Article
Materials Science, Multidisciplinary
Sergey Bakhlanov, Nikolay Bazlov, Ilia Chernobrovkin, Denis Danilov, Alexander Derbin, Ilia Drachnev, Irina Kotina, Oleg Konkov, Artem Kuzmichev, Maksim Mikulich, Valentina Muratova, Maxim Trushin, Evgeniy Unzhakov
Summary: The investigation focused on radiation-induced defects in the Al/SiO2/p-type FZ Si surface barrier detector irradiated with alpha-particles at room temperature using C-V and IDLTS methods. The measurements revealed the formation of radiation-induced acceptor traps and linked the observed increase in acceptor concentration to a near-midgap level. This level was associated with V2O defects previously identified as responsible for space-charge sign inversion in irradiated n-type Si detectors.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Crystallography
Zaid Alemoush, Attasit Tingsuwatit, Jing Li, Jingyu Lin, Hongxing Jiang
Summary: This study investigates the boron vacancy (V-B)-related defects in hexagonal BN (h-BN) using photocurrent excitation spectroscopy (PES) and temperature-dependent dark resistivity measurements. The results directly observe the energy levels of the V-B defects and further confirm their existence using other measurement techniques. The study suggests that optimizing the V/III ratio during HVPE growth can minimize the generation of V-B-related defects and improve the material quality.
Article
Engineering, Electrical & Electronic
Haewon Lee, Hyejeong Choi, Ilgu Yun
Summary: This study fabricated a silicon single-photon avalanche diode (Si-SPAD) with a deep multiplication zone using 0.11 μm CMOS technology. Different device structures were investigated, and it was found that the blank DNW structure exhibited a lower breakdown risk and less deviation compared to the mask DNW structure. Adjusting the PW sizes alleviated a new edge breakdown risk observed in the blank DNW structure between the DNW and PW. The STI structure showed a preferable fill factor. TCAD was performed to analyze various factors associated with Si-SPADs with deep multiplication structures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Joshua W. Kleppinger, Sandeep K. Chaudhuri, Utpal N. Roy, Ralph B. James, Krishna C. Mandal
Summary: Novel room-temperature nuclear radiation detector semiconductor material Quaternary Cd0.9Zn0.1Te1-ySey (CZTS) single crystals were successfully grown using modified vertical Bridgman method and traveling heater method. The addition of selenium in the Cd0.9Zn0.1Te (CZT) matrix improved the resolution performance of the detectors by reducing the formation of Te-Cd and Te-Zn antisites, confirmed by ab-initio calculations. The grown crystals were characterized using powder X-ray diffraction and energy dispersive X-ray spectroscopy, showing high purity and targeted stoichiometry.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
P. La Torraca, F. Caruso, A. Padovani, G. Tallarida, S. Spiga, L. Larcher
Summary: We present a comprehensive characterization of amorphous alumina in MIM stacks, extracting the distribution of atomic defects and bond-breaking process parameters. The active defects were profiled through various simulations, and the extracted defect energies were consistent with oxygen vacancies and aluminum interstitials. The breakdown statistics of voltage-dependent dielectric breakdown were investigated, showing complex and polarity-dependent breakdown patterns correlating with defect distributions.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Computer Science, Information Systems
Brett Setera, Aristos Christou
Summary: This review discusses the role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments. Real-time in situ material characterization is required to understand defects during material synthesis and when exposed to extreme environmental stress. The reduction of defects is crucial for wide bandgap semiconductors to reach their full potential.
Proceedings Paper
Engineering, Multidisciplinary
Tetsuo Narita, Daigo Kikuta, Kenji Ito, Tomoyuki Shoji, Tomohiko Mori, Satoshi Yamaguchi, Yasuji Kimoto, Kazuyoshi Tomita, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Jun Kojima, Jun Suda, Yoshitaka Nagasato, Satoshi Ikeda, Hiroki Watanabe, Masayoshi Kosaki, Tohru Oka
Summary: We investigated the reliability issues of gate oxides and p-n junctions in vertical GaN metal-oxide-semiconductor field-effect transistors (MOSFETs). A specially designed AlSiO gate oxide on GaN showed excellent stability and a projected lifetime of over 20 years at high temperatures. The reliability of GaN p-n diodes (PNDs) with different threading dislocation densities was also evaluated. The fabricated PNDs demonstrated robustness under high-temperature reverse bias, but reverse leakage pathways were formed at threading screw dislocations after continuous forward current stress, which should be minimized in future GaN substrates.
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
(2023)
Review
Physics, Multidisciplinary
Marzio De Napoli
Summary: Silicon Carbide (SiC) is a wide bandgap semiconductor with excellent properties, making it a promising material for radiation particle detection. This review provides an overview of the advantages and current research in SiC detectors. Key aspects related to material properties, growth techniques, doping, defects, electrical contacts, and characterization methods are summarized, with emphasis on their relationship to detector performance. The most recent experimental results on the use of SiC diodes for detecting various particles and radiation are discussed, as well as the effects of high temperature operation and radiation damage on detector performance.
FRONTIERS IN PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Shao-Chang Huang, Ching-Ho Li, Chih-Cherng Liao, Li-Fan Chen, Chun-Chih Chen, Kai-Chieh Hsu, Gong-Kai Lin, Chih-Hsuan Lin, Jian-Hsing Lee, Yu-Yung Kao, Ke-Horng Chen
Summary: A novel signal control switching architecture is proposed in this paper to enhance the ESD performance of large array devices, with only a small increase in layout area, significant improvement in electrostatic discharge robustness and electrical safe operation area characteristics can be achieved. This study is conducted in 0.15 μm Bipolar CMOS DMOS (BCD) with silicide technologies.
MICROELECTRONICS RELIABILITY
(2021)
Article
Engineering, Electrical & Electronic
Lakshay Gautam, Junhee Lee, Gail Brown, Manijeh Razeghi
Summary: This study reports high-quality, low dark current AlGaN/AlN photodetectors in deep ultraviolet range grown on AlN substrates. A comparison of electrical characteristics between photodetectors on AlN and Sapphire substrates reveals a reduction of four orders of magnitude in dark current density for AlN-based UV detectors.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Amlan Datta, Shariar Motakef
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2015)
Article
Instruments & Instrumentation
S. Lam, S. Swider, J. Fiala, A. Datta, S. Motakef
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
(2015)
Article
Instruments & Instrumentation
Amlan Datta, Piotr Becla, Shariar Motakef
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
(2015)
Article
Crystallography
Amlan Datta, Demi Moed, Piotr Becla, Matthew Overholt, Shariar Motakef
JOURNAL OF CRYSTAL GROWTH
(2016)
Article
Nanoscience & Nanotechnology
A. Datta, J. Fiala, P. Becla, Shariar Motakef
Article
Engineering, Electrical & Electronic
Amlan Datta, Piotr Becla, Shariar Motakef
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2018)
Article
Crystallography
Amlan Datta, Piotr Becla, Christo Guguschev, Shariar Motakef
JOURNAL OF CRYSTAL GROWTH
(2018)
Article
Crystallography
Santosh K. Swain, Yunlong Cui, Amlan Datta, Sachin Bhaladhare, Manchanahalli Rohan Rao, Arnold Burger, Kelvin G. Lynn
JOURNAL OF CRYSTAL GROWTH
(2014)
Article
Engineering, Electrical & Electronic
Amlan Datta, Santosh Swain, Yunlong Cui, Arnold Burger, Kelvin Lynn
JOURNAL OF ELECTRONIC MATERIALS
(2013)
Article
Multidisciplinary Sciences
Amlan Datta, Piotr Becla, Shariar Motakef
SCIENTIFIC REPORTS
(2019)
Article
Physics, Applied
Olivia K. Voyce, Mark A. Isaacs, Laura J. Harkness-Brennan, Tim D. Veal, Dan S. Judson, Shariar Motakef, Amlan Datta
Summary: Metal oxides are being studied as an alternative to metal contacts on thallium bromide (TlBr) radiation detectors, forming a type-II staggered heterojunction between TlBr and metal oxides upon contact. The valence band offsets (VBO) and conduction band offsets for SnO2/TlBr and ITO/TlBr heterojunctions have been determined using the Kraut method. The I-V response of symmetric In/SnO2/TlBr and In/ITO/TlBr planar devices is nearly Ohmic with low leakage current.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
A. Datta, R. Toufanian, W. Zhang, P. S. Halasyamani, S. Motakef
Summary: This study demonstrates the potential of gallium oxide (beta-Ga2O3)-based scintillators for high count rate applications, with crystals grown using the optical float zone (FZ) technique showing excellent scintillation properties.
Article
Materials Science, Multidisciplinary
Reyhaneh Toufanian, Santosh Swain, Piotr Becla, Shariar Motakef, Amlan Datta
Summary: This paper reports on the performance and fabrication processes of CsPbBr3 γ detectors, demonstrating good energy resolution and photopeak-to-Compton ratio. Large size ultrahigh purity CsPbBr3 crystals have been successfully grown, and the polarization problem has been mitigated.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Proceedings Paper
Optics
Amlan Datta, Piotr Becla, Demi Moed, Shariar Motakef
HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XVII
(2015)