Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 8, Issue 1, Pages 310-314Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2775139
Keywords
Cadmium compounds; photovoltaic cells; selenium; II-VI semiconductor materials
Funding
- National Science Foundation (NSF)'s Accelerating Innovation Research
- DOE's SunShot
- NSF's Industry/University Cooperative Research Center programs
- EPSRC Supergen SuperSolar Hub
- EPSRC [EP/N508433/1, EP/J017361/1, EP/P02484X/1] Funding Source: UKRI
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [1538733] Funding Source: National Science Foundation
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1540007] Funding Source: National Science Foundation
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An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase from approximately 26 to over 28 mA/cm(2). The open-circuit voltage obtained in the high-efficiency CdTe-only device was maintained and the fill-factor remained close to 80%. Improving the short-circuit current density and maintaining the open-circuit voltage lead to device efficiency over 19%. External quantum efficiency implied that about half the current was generated in the CdSeTe layer and half in the CdTe. Cross-sectional STEM and EDS showed good grain structure throughout. Diffusion of Se into the CdTe layer was observed. This is the highest efficiency polycrystalline CdTe photovoltaic device demonstrated by a university or national laboratory.
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