Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 8, Issue 1, Pages 342-347Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2775440
Keywords
Backside-illuminated photovoltaic (BSI-PV) device; complementary metal-oxide-semiconductor (CMOS); high-voltage generation; temperature sensors
Funding
- Ministry of Science and Technology, Taiwan [MOST104-2221-E-110-061, MOST105-2221-E-110-075]
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In this study, we demonstrate a complementary metal-oxide-semiconductor (CMOS) backside-illuminated photovoltaic (PV) module. Fabrication of the module involves localized substrate removal from a CMOS PV chip, the application of antireflective silicon nanowires, and supercritical carbon dioxide fluid treatment. The resulting PV module achieved open-circuit voltage of 1.76-2.05 V and electrical power of 0.061-3.44 mW under an illumination intensity of 0.1-4 mW/mm(2), which is sufficient for the direct powering of implantable temperature sensors without the need for a voltage-boosting circuit. The proposed PV module is applicable to remote self-powered systems in a wide variety of applications.
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