Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 8, Issue 1, Pages 266-271Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2775140
Keywords
Cd-free; chemical bath deposition; Cu(In,Ga)Se-2 (CIGSe)-based solar cells; Zn(S,O) buffer layer
Ask authors/readers for more resources
Chemical-bath-deposited (CBD) Zn(S, O) is one of the most studied and promisingCd-free buffer layers forCu(In, Ga)Se-2 (CIGSe)-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells. However, CBD Zn(S, O) presents some inconveniences compared with a classic CBD cadmium sulfide (CdS) buffer. Indeed, Zn(S, O) deposition time, important ammonia concentration, and metastable behavior of the final devices are obstacle to its generalized use. A new complexing agent, i.e., morpholine, has been mixed to ammonia as a buffer and complexing agent. From a theoretical study, the mix of these leads to the formation of a majority zinc-morpholine complex instead of the classic zinc-ammonia one. In situ studies have shown an increase in the deposition rate, allowing us to reduce the concentration of the other reactants. Scanning electron microscopy and X-ray photoelectron spectroscopy measurements have shown that the deposited material presents equivalent covering properties and sulfur incorporation ([S]/([S] + [O]) ratio) to the one determined using standard formulations. Finally, CIGSe-based devices have been realized using the optimized CBD Zn(S, O) as a buffer layer. Higher efficiencies than CdS-buffered reference aremeasured, and no metastability is observed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available