Article
Materials Science, Multidisciplinary
Jinbaek Bae, Arqum Ali, Jin Jang
Summary: Spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure exhibits excellent performance and stability, making it a promising metal oxide semiconductor for high-performance TFT backplanes.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
Jusin Lee, Min Jae Kim, Heewon Yang, Sunjin Kim, Seongoh Yeom, Gunwoo Ryu, Yoonsoo Shin, Onejae Sul, Jae Kyeong Jeong, Seung-Beck Lee
Summary: In this study, a stable and sensitive biochemical sensor based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with a versatile extended-gate electrode was reported. The sensor demonstrated high sensitivity and specificity for protein detection, and could be potentially used for future multifunctional biomolecular sensing and analysis.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Multidisciplinary
Taebin Lim, Suhui Lee, Jiseob Lee, HyungJin Choi, Byunglib Jung, SeungHyub Baek, Jin Jang
Summary: Artificial synapses are an essential element in neuromorphic computing systems. This study presents the development of a coplanar synaptic thin-film transistor using crystalline indium gallium tin oxide. The device demonstrates important biological synaptic behaviors and utilizes a new mechanism involving positively charged oxygen vacancies. Unlike previous reports, this device allows for the use of conventional gate insulators, making it a suitable candidate for highly integrated neuromorphic chips.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Zhi-Yue Li, Shu-Mei Song, Wan-Xia Wang, Jian-Hong Gong, Yang Tong, Ming-Jiang Dai, Song-Sheng Lin, Tian-Lin Yang, Hui Sun
Summary: In this study, homojunction thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (a-IGZO) as active channel layers were fabricated by RF magnetron sputtering. The effect of oxygen partial pressure on the properties of IGZO thin films was investigated. It was found that the resistivity of IGZO thin films increases with higher oxygen partial pressure. Optimal electrical characteristics were observed in homojunction IGZO TFTs with an oxygen partial pressure of 1.96%.
Article
Chemistry, Physical
Gwang-Bok Kim, Nuri On, Taikyu Kim, Cheol Hee Choi, Jae Seok Hur, Jun Hyung Lim, Jae Kyeong Jeong
Summary: In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) films with a single spinel phase are successfully grown at a low temperature (300 degrees C) through careful cation composition design and a catalytic chemical reaction. Thin-film transistors (TFTs) with amorphous In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers show reasonable mobility, while TFTs with polycrystalline spinel In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers exhibit high field-effect mobility and excellent stability.
Article
Nanoscience & Nanotechnology
Huan Yang, Xiaoliang Zhou, Haishi Fu, Baozhu Chang, Yuxin Min, Hao Peng, Lei Lu, Shengdong Zhang
Summary: The doping effect induced by aluminum treatment can improve the performance and stability of SATG a-IGZO TFTs by enhancing the conductivity of the source-drain regions. The generated oxygen vacancies and metal interstitials play a crucial role in the doping process. The results of the study demonstrate that this doping effect originates from the bulk rather than surface treatment.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Won-Gi Kim, Young Jun Tak, Hyukjoon Yoo, Hyung Tae Kim, Jeong Woo Park, Dong Hyun Choi, Hyun Jae Kim
Summary: By using sodium hypochlorite (NaClO) solution as an activation source, the activation temperature of a-IGZO TFTs was reduced from 300 to 150 degrees C, leading to satisfactory electrical characteristics. The mechanism of NaClO activation for a-IGZO TFTs involves photo-assisted oxygen radical (POR) and heat-driven oxygen radical (HOR) effects, which generate reactive oxygen species to activate TFTs at low temperatures.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Jeonga Lee, Cheol Hee Choi, Taikyu Kim, Jaeseok Hur, Min Jae Kim, Eun Hyun Kim, Jun Hyung Lim, Youngho Kang, Jae Kyeong Jeong
Summary: The study found that doping with hydrogen (H) into oxygen sites (HO) can significantly improve the performance of amorphous In-Ga-Zn-Sn oxide (aIGZTO) thin-film transistors (TFTs).
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Xianyang Xue, Tingting Zhao, Xueming Tian, Li Yuan, Zhigan Wang, Tongkuai Li, Jianhua Zhang
Summary: This article proposes a flexible dual-parameter sensor array based on a-IGZO TFTs, which decouples pressure and temperature perception by optimizing the combination of MXene and carbon nanotubes hybrid films. It has potential applications in the field of multifunctional electronic skin.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Engineering, Electrical & Electronic
Kaizhen Han, Subhranu Samanta, Shengqiang Xu, Ying Wu, Xiao Gong
Summary: The study found that by reducing the equivalent oxide thickness, a temperature-independent mu(eff) can be achieved in the high field or high carrier concentration regime, while a strong temperature dependency is observed in the low field or low carrier concentration regime. Additionally, the relationship between EOT scaling and the gate bias voltage at which E-F equals to E-M was studied, revealing that α-IGZO TFTs can achieve high performance in low-power applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Wanyu Zeng, Zengchong Peng, Dong Lin, Anna A. Guliakova, Qun Zhang, Guodong Zhu
Summary: This study reports a dual-mode proximity sensor based on an oxide thin-film transistor(TFT) that utilizes a tungsten carrier suppresser to develop semiconducting materials and devices. The sensor performs well in flat panel display applications and can also sense the proximity and angle of approach of charged objects.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Che-Lun Chang, Pei-Huang Hsu, Wei-Ting Chen, Teng-Yuan Chang, Ching-Sung Lee, Shun-Cheng Shih, Wei-Chou Hsu
Summary: This study investigates the impact of ambient/carrier gases on the material characteristics of a-InGaZnO thin films and the performance of TFTs. The results show that using different gases can improve film quality and TFT performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Weijie Ye, Yuan Liu, Bingqi Wang, Junkai Huang, Xiaoming Xiong, Wanling Deng
Summary: An improved model is developed to characterize the low-frequency noise (LFN) properties of amorphous indium-zinc-oxide thin-film transistors (a-IZO TFTs) in this article. The model considers both the oxide traps in the gate insulator and the discrete trap centers in the active-layer film, accurately describing the excess noise in the subthreshold and above-threshold regions. The model has been validated and successfully applied to a-IZO TFTs with different tail-state densities.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Mingyuan Liu, Hyeonghun Kim, Xingyu Wang, Han Wook Song, Kwangsoo No, Sunghwan Lee
Summary: The introduction of a conducting IZO buffer has successfully reduced the energy barrier for charge carriers and specific contact resistance, leading to an enhanced field effect mobility in amorphous IZO thin-film transistors.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Wei Zhong, Liangyun Kang, Sunbin Deng, Lei Lu, Ruohe Yao, Linfeng Lan, Hoi Sing Kwok, Rongsheng Chen
Summary: The study found that ITZO thin-film transistors with a scandium oxide (Sc2O3) passivation layer showed excellent electrical performance and stability, especially under negative bias temperature stress and positive bias temperature stress. In contrast, devices with an aluminum oxide (Al2O3) passivation layer exhibited poorer stability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
Rishabh Upadhyay, George Thomas, Yu-Cheng Chang, Dmitry S. Golubev, Andrew Guthrie, Azat Gubaydullin, Joonas T. Peltonen, Jukka P. Pekola
Summary: The study presents a robust method to achieve strong coupling between a superconducting flux qubit and a high-quality quarter-wavelength coplanar waveguide resonator, reaching a qubit-resonator coupling strength of 655 MHz, 10% of the resonator frequency. Experimental characterization of flux qubits coupled to superconducting resonators demonstrates excellent agreement with the proposed theoretical model, showcasing the progression from strong to ultrastrong coupling regime.
PHYSICAL REVIEW APPLIED
(2021)
