High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

This paper investigates methods for electroplating thick (>20 mu m), high-coercivity CoPt films using high current densities (up to 1 A/cm(2)) and elevated bath temperatures (70 degrees C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm(2) and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 mu m thick in 1 hr on silicon substrates (0.35 mu m/min plating rate). After standard thermal treatment (675 degrees C, 30 min) to achieve the ordered L1(0) crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m(3). (C) 2017 Author(s).