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Title
Tunability of p- and n-channel TiOx thin film transistors
Authors
Keywords
-
Journal
Scientific Reports
Volume 8, Issue 1, Pages -
Publisher
Springer Nature
Online
2018-06-12
DOI
10.1038/s41598-018-27598-5
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Note: Only part of the references are listed.- High power impulse magnetron sputtered p-type γ-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties
- (2017) Wu-Chang Peng et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO 2 -Based Thin Film Transistors
- (2017) Hyunwoo Choi et al. ECS Journal of Solid State Science and Technology
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- (2016) Yun-Shiuan Li et al. IEEE ELECTRON DEVICE LETTERS
- TiO 2 /Cu 2 O all-oxide heterojunction solar cells produced by spray pyrolysis
- (2015) Michele Pavan et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering
- (2015) Kachirayil J. Saji et al. ECS Journal of Solid State Science and Technology
- Rutile TiO2 active-channel thin-film transistor using rapid thermal annealing
- (2014) Sung-Jin Kim et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review
- (2014) D. Acharyya et al. MICROELECTRONICS RELIABILITY
- High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate
- (2013) H. H. Hsu et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- The effect of Nb doping on the performance and stability of TiOx devices
- (2013) Kyung-Chul Ok et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Vacancies in ordered and disordered titanium monoxide: Mechanism of B1 structure stabilization
- (2013) M.G. Kostenko et al. JOURNAL OF SOLID STATE CHEMISTRY
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer
- (2012) Ho Yong Chong et al. JOURNAL OF ELECTRONIC MATERIALS
- Thin Film Transistor Based on TiOx Prepared by DC Magnetron Sputtering
- (2012) Sung Mook Chung et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Electronic structure of TiO2 rutile with oxygen vacancies: Ab initio simulations and comparison with the experiment
- (2011) T. V. Perevalov et al. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
- TiO2-Based Thin Film Transistors with Amorphous and Anatase Channel Layer
- (2011) W. S. Shih et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn
- (2010) Mark C. Biesinger et al. APPLIED SURFACE SCIENCE
- Intrinsic n-type Defect Formation in TiO2: A Comparison of Rutile and Anatase from GGA+U Calculations
- (2010) Benjamin J. Morgan et al. Journal of Physical Chemistry C
- Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering
- (2010) W.S. Shih et al. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
- High power pulsed magnetron sputtering: A review on scientific and engineering state of the art
- (2009) K. Sarakinos et al. SURFACE & COATINGS TECHNOLOGY
- Improved Electrical Characteristics of Amorphous Oxide TFTs Based on $\hbox{TiO}_{x}$ Channel Layer Grown by Low-Temperature MOCVD
- (2008) Jae-Woo Park et al. IEEE ELECTRON DEVICE LETTERS
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