Article
Engineering, Electrical & Electronic
Kamilya Smagulova, Mohammed E. Fouda, Fadi Kurdahi, Khaled N. Salama, Ahmed Eltawil
Summary: Deep neural networks (DNNs) can learn real-world data and make real-time decisions, but are hindered by software and hardware limitations. Emerging nonvolatile memory (NVM) devices and the compute-in-memory (CIM) paradigm offer a new hardware architecture for efficient DNN acceleration. This survey reviews ReRAM-based DNN many-core accelerators, highlighting their superiority over CMOS counterparts and the need for new performance metrics and benchmarking standards.
PROCEEDINGS OF THE IEEE
(2023)
Article
Materials Science, Multidisciplinary
Madhavi Kumara, William Clower, Kiran Seetala, Joshua B. Joffrion, Chester G. Wilson
Summary: This research reports on the development and characterization of ferrite based resistive switching devices, combining the excellent multifunctional memory properties of ferrites and silicon processing technologies. The devices consist of single transition metal ferrites (Co, Cu, Ni, and Zn) confirmed through spectroscopy and X-ray diffraction. Characterization shows low resistive state ohmic conduction and additional non-linear conducting mechanisms, with active electrodes contributing to device stability.
Article
Nanoscience & Nanotechnology
Junhyuk Ahn, Junsung Bang, Young-Min Kim, Seongkeun Oh, Soo Young Kim, Yun-Mo Sung, Soong Ju Oh
Summary: Metal-halide perovskite-based resistive random-access memory (ReRAM) devices are promising for neuromorphic systems due to their low operation voltage and distinct signal characteristics. However, the high density of defects on the surfaces of nanometer-sized perovskites hinders their resistive switching characteristics. In this study, defects are engineered and the chemical compositions are tuned through water treatment, resulting in successful 0D perovskite-based ReRAM devices with improved performance.
MATERIALS TODAY NANO
(2023)
Article
Engineering, Electrical & Electronic
Je-Min Hung, Cheng-Xin Xue, Hui-Yao Kao, Yen-Hsiang Huang, Fu-Chun Chang, Sheng-Po Huang, Ta-Wei Liu, Chuan-Jia Jhang, Chin- Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
Summary: Advanced complementary metal-oxide-semiconductor technology and resistive random-access memory have been used to create a high-bit-precision compute-in-memory macro for efficient edge computing. The non-volatile computing-in-memory architecture reduces latency and energy consumption of artificial intelligence computation. The macro offers low latency and high energy efficiency for binary to 8-bit-input-8-bit-weight dot-product operations.
NATURE ELECTRONICS
(2021)
Review
Computer Science, Information Systems
Weijian Chen, Zhi Qi, Zahid Akhtar, Kamran Siddique
Summary: This paper discusses various methods and design schemes for ReRAM-based PIM neural network accelerators, and addresses the limitations or challenges of ReRAM in a neural network.
Article
Nanoscience & Nanotechnology
Yang Li, Yelong Pan, Cheng Zhang, Zhiming Shi, Chunlan Ma, Songtao Ling, Min Teng, Qijian Zhang, Yucheng Jiang, Run Zhao, Qichun Zhang
Summary: Controlling the performance of N-containing heteroaromatic semiconductors through molecular-shape engineering enables reliable binary to ternary ReRAM switching. This study sheds light on the potential of N-containing heteroaromatic semiconductors for promising ultrahigh-density data-storage ReRAM applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Jingjia Meng, Jonathan M. Goodwill, Evgheni Strelcov, Kefei Bao, Jabez J. McClelland, Marek Skowronski
Summary: Understanding the physical changes during electroformation and switching processes in transition-metal-oxide-based non-volatile memory devices is important for advancing this technology. In this study, scanning thermal microscopy measurements were conducted in vacuum on TaOx-based memory devices to assess the characteristics of these devices. The results showed that a hot spot is created by a gap in the conducting filament that forms closest to the anode during the electroformation process. Additionally, the gap disappears when the device is switched from high resistance to low resistance.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Jingjia Meng, Jonathan M. Goodwill, Evgheni Strelcov, Kefei Bao, Jabez J. McClelland, Marek Skowronski
Summary: Understanding the physical changes during electroformation and switching processes in transition-metal-oxide-based non-volatile memory devices is crucial for advancing this technology. In this study, scanning thermal microscopy measurements were performed on TaOx-based memory devices, revealing that the surface temperature footprints of the filament were influenced by the polarity of electroforming and the resistance states of the device. These findings provide insights into the formation and switching mechanisms of the devices.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Cheng-Xin Xue, Yen-Cheng Chiu, Ta-Wei Liu, Tsung-Yuan Huang, Je-Syu Liu, Ting-Wei Chang, Hui-Yao Kao, Jing-Hong Wang, Shih-Ying Wei, Chun-Ying Lee, Sheng-Po Huang, Je-Min Hung, Shih-Hsih Teng, Wei-Chen Wei, Yi-Ren Chen, Tzu-Hsiang Hsu, Yen-Kai Chen, Yun-Chen Lo, Tai-Hsing Wen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Chin-Yi Su, Chung-Cheng Chou, Yu-Der Chih, Meng-Fan Chang
Summary: The development of small, energy-efficient artificial intelligence edge devices has been limited by data transfer requirements between the processor and memory in traditional computing architectures. Non-volatile compute-in-memory (nvCIM) architectures show potential to overcome these limitations, but challenges still remain in developing configurations for high-bit-precision dot-product operations.
NATURE ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Sebastian Siegel, Christoph Baeumer, Alexander Gutsche, Moritz von Witzleben, Rainer Waser, Stephan Menzel, Regina Dittmann
Summary: Introducing retention enhancement oxide layers into the memristive stack can reduce switching speed by changing voltage and temperature distribution in the cell and influencing the rate-limiting step of switching kinetics. This trade-off between retention and switching speed is important for the rational engineering of memristive devices.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Gergely Tarsoly, Jae-Yun Lee, Fei Shan, Sung-Jin Kim
Summary: This paper presents a resistive memory based on TiO2 and a-IGZO thin films with optimized annealing temperature. The study proposes a memory mechanism and demonstrates low voltage operation, good retention stability, and endurance stability of the device.
APPLIED SURFACE SCIENCE
(2022)
Article
Multidisciplinary Sciences
Jorge A. Calderon, Heiddy P. Quiroz, Cristian L. Teran, M. Manso-Silvan, A. Dussan, Alvaro Munoz Noval
Summary: This work presents the structural, morphological, magnetic, and electrical properties of GaSb/Mn multilayer deposited via DC magnetron sputtering at room temperature and at 423 K. The formation of GaSb, Mn3Ga, and Mn2Sb2 phases was determined through XRD patterns. FTIR measurements showed optical interference associated with periodicity and homogenous thickness of the layers. HR-SEM revealed a columnar microstructure in the formation of layers and grain nucleation on the surface. Ferromagnetic-like behavior and hysteresis curves with shifts attributed to exchange bias coupling were observed in the multilayers at room temperature.
SCIENTIFIC REPORTS
(2023)
Article
Computer Science, Information Systems
Felipe Pinto, Ioannis Vourkas
Summary: Research has been conducted on utilizing memristors for basic logical operations, but system-level design of computational memories has not been fully considered. This study proposes a design for a ReRAM-based general-purpose computational memory, with performance characteristics validated through circuit simulations.
Article
Computer Science, Hardware & Architecture
Sourjya Roy, Shrihari Sridharan, Shubham Jain, Anand Raghunathan
Summary: A fast and customizable modeling framework, TxSim, is proposed for functionally evaluating DNN training on crossbar-based hardware, achieving 6x-108x improvement in simulation speed over prior works.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
(2021)
Article
Materials Science, Multidisciplinary
Ying-Chen Chen, Yao-Feng Chang, Chao-Cheng Lin, Chang-Hsien Lin
Summary: This study presents the dual functions and integration capability of HfOx-based ReRAM and 2V-programmable via-fuse technology in the BEOL process. The impact of various factors on the performance and reliability of ReRAM and via fuse has been extensively studied. The results show that they can sustain at high temperatures without degradation, making them suitable for high-density and multi-functional embedded applications.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Physics, Applied
Chi-Chang Wu, Yu-Ping Hsiao, Hsin-Chiang You, Guan-Wei Lin, Min-Fang Kao, Yankuba B. Manga, Wen-Luh Yang
JAPANESE JOURNAL OF APPLIED PHYSICS
(2018)
Article
Chemistry, Physical
Chung-Kai Wu, Kundan Sivashanmugan, Tzung-Fang Guo, Ten-Chin Wen
Article
Electrochemistry
Chi-Chang Wu, Yankuba B. Manga, Ming-Hsun Yang, Zheng-Shun Chien, Kuan-Sheng Lee
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2018)
Article
Chemistry, Physical
Huei Yu Huang, Yankuba B. Manga, Wan-Ning Huang, Chung-Kwei Lin, Ching-Li Tseng, Haw-Ming Huang, Chia-Yu Wu, Chi-Chang Wu
Article
Engineering, Electrical & Electronic
Chi-Chang Wu, Wen-Fa Wu, Guan-Wei Lin, Wen-Luh Yang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Chemistry, Analytical
Chi-Chang Wu, Min-Rong Wang
Summary: A single-crystalline silicon nanobelt field-effect transistor (SiNB FET) device was developed for pH and biomolecule sensing, with buffer concentration shown to affect sensitivity and stability. The sensor demonstrated sensitivity to solution pH and AFP, with results indicating a negative relationship between buffer concentration and sensor sensitivity. Surface functionalization was found to impact AFP sensing effectiveness, with buffer concentration influencing current shifts in the sensor. Overall, buffer concentration plays a crucial role in the sensitivity and stability of the SiNB FET device in chemical and biomolecular sensing.
Article
Chemistry, Analytical
Chi-Chang Wu
Summary: This study explored the effect of nanowire dimensions on silicon NWFET biosensors. The results showed that shorter and fewer nanowires can increase the sensitivity of the sensors and have a linear sensing range within a specific concentration range.
Article
Electrochemistry
Chi-Chang Wu
Summary: In response to the COVID-19 pandemic, a polycrystalline silicon nanowire field-effect transistor (NWFET) was developed to detect the spike protein of SARS-CoV-2. The biosensor demonstrated high sensitivity and stability, making it a promising tool for rapid screening of the virus.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2022)
Article
Engineering, Biomedical
Ming-Chung Wu, Helen Wenshin Yu, Yin-Quan Chen, Meng-Hsin Ou, Ricardo Serrano, Guan-Lin Huang, Yang-Kao Wang, Kung-hui Lin, Yu-Jui Fan, Chi-Chang Wuj, Juan C. del Alamo, Arthur Chiou, Shu Chien, Jean-Cheng Kuo
Summary: Through engineered extracellular matrices, the study reveals the association between cell shape, focal adhesion signals, and mesenchymal stromal cell (MSC) lineage commitment. Square cells form mature focal adhesions and symmetrical radial fiber bundles, while circular cells align their transverse fibers parallel to the cell edge. The contractile force generated by the myosin IIA-enriched transverse fibers is distributed through the symmetrical radial fiber bundles, driving focal adhesion organization and maturation and regulating MSC fate decision through YAP mechanotransduction signaling.
ACTA BIOMATERIALIA
(2023)
Article
Physics, Applied
Chi-Chang Wu, Tsung Chen Jr, Wen-Luh Yang
Summary: This paper proposes a nonvolatile polyimide resistive photomemory device with a simple metal-PI-metal configuration that can alter its resistance using pulsed UV irradiation and maintain it at the altered level even after irradiation has ceased. The UV irradiation causes a structural transformation in the polyimide, leading to a change in the conduction mechanism of the photomemory device.
APPLIED PHYSICS LETTERS
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Tun-Po Liao, Bo-Ling Tzeng, Chi-Chang Wu, Wen-Luh Yang
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)
(2018)
Correction
Electrochemistry
Chia-Yu Wu, Huei Yu Huang, Chi-Chang Wu
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE
(2018)
Correction
Electrochemistry
Huei Yu Huang, Chia-Yu Wu, Chi-Chang Wu
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE
(2018)
Article
Engineering, Chemical
Han Lee, Jiunn-Der Liao, Jung-Wei Yang, Wen-Dung Hsu, Bernard Haochih Liu, Teng-Chien Chen, Kundan Sivashanmugan, Aharon Gedanken
CHEMICAL ENGINEERING & TECHNOLOGY
(2018)