An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel

Published 2015 View Full Article

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Title
An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 11, Pages 3633-3639
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-09-24
DOI
10.1109/ted.2015.2475604

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