Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors

Title
Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 5, Pages 1498-1503
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-03-31
DOI
10.1109/ted.2015.2412452

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