Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Published 2015 View Full Article

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Title
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 11, Pages 3653-3657
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-10-09
DOI
10.1109/ted.2015.2479592

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