Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In–Ga–Zn–O as Electrode

Published 2015 View Full Article

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Title
Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In–Ga–Zn–O as Electrode
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 10, Pages 3244-3249
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-08-22
DOI
10.1109/ted.2015.2461662

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