Effect of Dislocation Arrays at Grain Boundaries on Electronic Transport Properties of Bismuth Antimony Telluride: Unified Strategy for High Thermoelectric Performance
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Title
Effect of Dislocation Arrays at Grain Boundaries on Electronic Transport Properties of Bismuth Antimony Telluride: Unified Strategy for High Thermoelectric Performance
Authors
Keywords
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Journal
Advanced Energy Materials
Volume 8, Issue 20, Pages 1800065
Publisher
Wiley
Online
2018-04-10
DOI
10.1002/aenm.201800065
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